Quill, N,Lynch, RP,O'Dwyer, C,Buckley, DN,Chang, PC,Suzuki, M,He, JH,Chou, LJ,Overberg, ME

LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 5 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 54 (SOTAPOCS 54)

Electrochemical Formation of Ordered Pore Arrays in InP in KCl

2012

December

Published

1

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N-INP POROUS SILICON FORMATION MECHANISMS CRYSTAL ORIENTATION GROWTH ELECTROLYTE SEMICONDUCTORS OSCILLATIONS ANODIZATION DEPENDENCE

377

392

Pores are formed electrochemically in n-InP in KCl electrolytes with concentrations of 2 mol dm(-3) or greater. The pore morphology is similar to what is seen in other halide-based electrolytes. At low potentials, crystallographically oriented (CO) pores are formed. At higher potentials, current-line oriented (CLO) pores are formed. Crystallographically oriented pore walls are observed for both pore morphologies. When formed at a constant current, potential oscillations are observed which have been correlated to oscillations in the pore width. The CLO pore wall smoothness and overall uniformity increase as KCl concentration is increased. The porous structures formed in KCl compare favourably with those formed in the more acidic or alkaline electrolytes that are typically used to form these structures.

10.1149/05006.0377ecst