Conference Publication Details
Mandatory Fields
Quill, N,Lynch, RP,O'Dwyer, C,Buckley, DN,Boukherroub, R,Granitzer, P,Schmuki, P,Lockwood, DJ,Masudar, H
PITS AND PORES 5: A SYMPOSIUM IN HONOR OF DAVID LOCKWOOD
Current-Line Oriented Pore Formation in n-InP Anodized in KOH
2013
January
Published
1
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Optional Fields
POROUS SILICON FORMATION FORMATION MECHANISM ELECTROCHEMICAL FORMATION CRYSTAL ORIENTATION ANODIZATION GROWTH GAAS ELECTROLYTES DEPENDENCE MORPHOLOGY
143
153
Electrochemically formed pores in InP in KOH switch from being crystallographically oriented (CO) to being current-line oriented (CLO) above a specific potential in both 17 mol dm(-3) and 2.5 mol dm(-3) KOH at a temperature of 10 degrees C. The CLO pores formed in KOH have roughly elliptical cross sections, and are wider along the < 01 (1) over bar > than along the perpendicular < 011 > direction. The pores can form only when a critical porosity is reached and their formation marks the transition from porous to planar etching. Many of the features of pore formation are explained by evoking the effect that both temperature and electrolyte concentration can have on the effective diffusion length of holes at the semiconductor-solution interface.
10.1149/05037.0143ecst
Grant Details