Conference Publication Details
Mandatory Fields
Quill, N,Lynch, RP,O'Dwyer, C,Buckley, DN,ODwyer, C,Douglas, E,Jang, S,Carter, MT,Chueh, YL,Jo, MH,Suzuki, M,He, JH,Albin, S,Chou, LJ,Jin, S,MartinPalma, RJ
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6
Effect of Current Density on Pore Formation in n-InP in KOH
2013
January
Published
1
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Optional Fields
POROUS SILICON FORMATION ELECTROCHEMICAL FORMATION FORMATION MECHANISMS CRYSTAL ORIENTATION ANODIC FORMATION GAAS SURFACES ANODIZATION DEPENDENCE GROWTH
25
38
InP samples which were galvanostatically anodised in 5 mol dm(-3) KOH exhibited crystallographic pore etching at current densities ranging from 1 mA cm(-2) to 20 mA cm(-2). Surprisingly, the total charge at growth termination (similar to 1.8 C cm(-2)) and the corresponding layer thickness (similar to 3.0 mu m) were independent of current density in experiments at continuous constant current. Surface pit density was proportional to current density, indicating that the average current per pit was 1.7 pA, independent of current density. The influence of mass transport on the termination of porous layer growth was demonstrated in an experiment at low current density where the current was interrupted a number of times before layer growth ended. At low current densities, pores had sharp tips, triangular cross-sections and large pore widths. At higher current densities, both the pore tips and the pore cross-sections became more rounded while the pore width decreased. These variations are explained in terms of the effect that different rates of hole supply (at different current densities) can have on the rate of indium vacancy formation on the three {111} A faces that make up the pore tip.
10.1149/05808.0025ecst
Grant Details