Conference Publication Details
Mandatory Fields
Lynch, RP,Quill, N,O'Dwyer, C,Nakahara, S,Buckley, DN,Chang, PC,Suzuki, M,He, JH,Chou, LJ,Overberg, ME
LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 5 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 54 (SOTAPOCS 54)
Mechanism that Dictates Pore Width and < 111 > A Pore Propagation in InP
2012
December
Published
1
()
Optional Fields
III-V COMPOUNDS N-TYPE SILICON POROUS GAAS ANODIC FORMATION DANGLING BONDS MORPHOLOGY ORIENTATION SURFACES PROFILE LAYERS
319
334
We report a mechanism for pore growth and propagation based on a three-step charge transfer model. The study is supported by electron microscopy analysis of highly doped n-InP samples anodised in aqueous KOH. The model and experimental data are used to explain propagation of pores of characteristic diameter preferentially along the < 111 > A directions. We also show evidence for deviation of pore growth from the < 111 > A directions and explain why such deviations should occur. The model is self-consistent and predicts how carrier concentration affects the internal dimensions of the porous structures.
10.1149/05006.0319ecst
Grant Details