Liu, N,Kumbham, M,Pita, I,Guo, Y,Bianchin, P,Diaspro, A,Tofail, SAM,Peremans, A,Silien, C

2016

March

Acs Photonics

Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy

Published

()

super-resolution label-free microspectroscopy bleaching induced absorption nanowire pump-probe cadmium selenide STIMULATED-EMISSION CARRIER DYNAMICS FLUORESCENCE MICROSCOPY SOLAR-CELLS RESOLUTION ULTRAFAST CDSE NANOPARTICLES RELAXATION NANOSCALE

3

478

485

Label-free absorption spectroscopies are frontline techniques to reveal the spectral fingerprint, composition and environment of materials and are applicable to a wide range of samples. In an effort to improve the spatial resolution of far-field absorption microscopy, which is limited by the diffraction of light, an imaging technique based on transient absorption saturation has recently been developed. Here we report a far-field transient absorption microscopy that does not require the sample to exhibit saturable absorption to break the diffraction barrier. By alternating the wavefront of the pump beams and exploiting a nonlinearity in the transient absorption intrinsic to semiconductors, we demonstrate imaging, beyond the diffraction limit, in CdSe nanobelts. This differential technique is applied for label-free super-resolution absorption microspectroscopy.

10.1021/acsphotonics.5b00716