Connelly, MJ,Mazzucato, S,Carrere, H,Marie, X,Amand, T,Achouche, M,Caillaud, C,Brenot, R

2016

June

Journal Of Lightwave Technology

Wideband Steady-State Model of a Strained InGaAsP MQW-SOA

Published

()

Modeling quantum wells semiconductor optical amplifier SEMICONDUCTOR OPTICAL AMPLIFIERS QUANTUM-WELL LASERS INTRABAND RELAXATION ABSORPTION-SPECTRA NUMERICAL-MODEL GAIN TIME

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A steady-state model of a strained MQW-SOA is described. Least-squares fitting of the model to experimental polarization resolved amplified spontaneous emission spectra is used to obtain difficult to measure model parameters such as the line-broadening lineshape parameters, Auger recombination, bandgap shrinkage, and intervalence band absorption coefficients. Well capture and escape processes are modeled by a carrier density dependent net escape time which accounts for barrier effects. Simulations and comparisons with experimental data are given which demonstrate the accuracy and versatility of the model.

10.1109/JLT.2016.2550183