© The Electrochemical Society. Anodization of highly doped n-InP in KOH can result in a nanoporous sub-surface layer. Pores originate from surface pits and an isolated porous domain is initially formed beneath each pit. Domains are separated from the surface by a thin non-porous layer and each is connected to the electrolyte by its pit. Pores emanate along the <111>A directions to form truncated tetrahedral domains. We propose a three-step model of electrochemical pore formation: (1) hole generation at pore tips, (2) hole diffusion and (3) electrochemical oxidation of the semiconductor to form etch products. Step 1 determines the overall etch rate. However, if the kinetics of Step 3 are slow relative to Step 2, then etching can occur at preferred crystallographic sites leading to pore propagation in preferential directions. Pore width decreases with increasing anodization temperature and with increasing KOH concentration up to 9 mol dm -3 , above which it decreases. At low current densities pores have sharp tips and triangular cross-sections; at higher current densities, the pore tips and cross-sections become more rounded while the pore width decreases. These observations are explained by the three-step model.